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IRFBE30STRR

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IRFBE30STRR

IRFBE30STRR

Image is for reference, please contact us to get the real picture

Part No :

IRFBE30STRR

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 4.1A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
120612 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
PDF
IRFBE30STRR PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBE30STRR is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBE30STRR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBE30STRR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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