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BSC048N025S G

BSC048N025S G

MOSFET N-CH 25V 19A/89A TDSON

BSC048N025S G

BSC048N025S G

Image is for reference, please contact us to get the real picture

Part No :

BSC048N025S G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 19A/89A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
891889 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2025
PDF
BSC048N025S G PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2670 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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