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SPP06N60C3HKSA1

SPP06N60C3HKSA1

MOSFET N-CH 650V 6.2A TO220-3

SPP06N60C3HKSA1

SPP06N60C3HKSA1

Image is for reference, please contact us to get the real picture

Part No :

SPP06N60C3HKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 6.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
592459 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 03 - May 07 2025
PDF
SPP06N60C3HKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
SPP06N60C3HKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPP06N60C3HKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPP06N60C3HKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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