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TK55D10J1(Q)

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

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TK55D10J1(Q)

TK55D10J1(Q)

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Part No :

TK55D10J1(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 55A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
022602 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 22 - May 26 2025
PDF
TK55D10J1(Q) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 10 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220(W)
Package / Case:TO-220-3
TK55D10J1(Q) is available at GangBo-ic.com, Please review product page below for detailed information, including TK55D10J1(Q) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK55D10J1(Q) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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