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BSC029N025S G

BSC029N025S G

Image is for reference, please contact us to get the real picture

Part No :

BSC029N025S G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 24A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
432843 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 31 - Nov 04 2025
PDF
BSC029N025S G PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5090 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
BSC029N025S G is available at GangBo-ic.com, Please review product page below for detailed information, including BSC029N025S G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC029N025S G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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