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SIT8008BI-12-18E-100.000000D

SIT8008BI-12-18E-100.000000D

MEMS OSC XO 100.0000MHZ H/LVCMOS

STI12N65M5

STI12N65M5

MOSFET N-CH 650V 8.5A I2PAK

500SAAA70M0000ACFR

500SAAA70M0000ACFR

XTAL OSCILLATOR

SF2C-H12-P

SF2C-H12-P

LIGHT CURTAIN 12BEAM 240MM 24VDC

STI12N65M5

STI12N65M5

Image is for reference, please contact us to get the real picture

Part No :

STI12N65M5

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 8.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
922892 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
STI12N65M5 PDF
Type Description
Series:MDmesh™ V
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI12N65M5 is available at GangBo-ic.com, Please review product page below for detailed information, including STI12N65M5 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI12N65M5 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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