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STB23NM60N

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Part No :: STB23NM60N

Manufacturer: STMicroelectronics

Description: MOSFET N-CH 600V 19A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 083008 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 07 - Nov 11 2025

PDF: STB23NM60N PDF

Type	Description
Series:	MDmesh™ II
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	60 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	2050 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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