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BSP123E6327T

BSP123E6327T

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Part No :

BSP123E6327T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 370MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
373137 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 09 - Jun 13 2025
PDF
BSP123E6327T PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.79W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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