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IPP050N06N G

IPP050N06N G

MOSFET N-CH 60V 100A TO220-3

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IPP050N06N G

IPP050N06N G

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Part No :

IPP050N06N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
693169 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2025
PDF
IPP050N06N G PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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