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IRF6710S2TR1PBF

IRF6710S2TR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF6710S2TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 12A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
943594 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 27 - May 31 2025
PDF
IRF6710S2TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 13 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 15W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET S1
Package / Case:DirectFET™ Isometric S1
IRF6710S2TR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6710S2TR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6710S2TR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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