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SI3812DV-T1-E3

SI3812DV-T1-E3

MOSFET N-CH 20V 2A 6TSOP

SI3812DV-T1-E3

SI3812DV-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI3812DV-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 2A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
593859 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
SI3812DV-T1-E3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
SI3812DV-T1-E3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI3812DV-T1-E3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI3812DV-T1-E3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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