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SIS414DN-T1-GE3

SIS414DN-T1-GE3

MOSFET N-CH 30V 20A PPAK1212-8

SIS414DN-T1-GE3

SIS414DN-T1-GE3

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Part No :

SIS414DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 20A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
334133 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 05 - Aug 09 2025
PDF
SIS414DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:795 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.4W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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