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2N6770

2N6770

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Part No :

2N6770

Manufacturer
Microsemi
Description
MOSFET N-CH 500V 12A TO3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
504150 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 19 - Jun 23 2025
PDF
2N6770 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):4W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AE
2N6770 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6770 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6770 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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