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IPI024N06N3GHKSA1

IPI024N06N3GHKSA1

MOSFET N-CH 60V 120A TO262-3

XUH535100.000000I

XUH535100.000000I

CLCC 5.00X3.20X1.10 MM, 2.54MM P

P51-15-S-UCF-D-5V-000-000

P51-15-S-UCF-D-5V-000-000

SENSOR 15PSIS 9/16 UNF 5V

SW6-040120RN4HF

SW6-040120RN4HF

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IPI024N06N3GHKSA1

IPI024N06N3GHKSA1

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Part No :

IPI024N06N3GHKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
634263 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 22 - Jun 26 2025
PDF
IPI024N06N3GHKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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