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MOSFET N-CH 600V 9.2A TO220AB

IRFB9N60A

IRFB9N60A

Image is for reference, please contact us to get the real picture

Part No :

IRFB9N60A

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 9.2A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
114311 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2025
PDF
IRFB9N60A PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB9N60A is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB9N60A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB9N60A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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