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FDD6N50TF

FDD6N50TF

MOSFET N-CH 500V 6A DPAK

046214017010800/+

046214017010800/+

FPC 0.5MM

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P51-200-S-L-MD-4.5V-000-000

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XC6501C351MR-G

XC6501C351MR-G

IC REG LINEAR 3.5V 200MA SOT25

FDD6N50TF

FDD6N50TF

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Part No :

FDD6N50TF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 500V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
424342 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 28 - Jul 02 2025
PDF
FDD6N50TF PDF
Type Description
Series:UniFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 25 V
FET Feature:-
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TF is available at GangBo-ic.com, Please review product page below for detailed information, including FDD6N50TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD6N50TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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