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BSP603S2LHUMA1

BSP603S2LHUMA1

MOSFET N-CH 55V 5.2A SOT223-4

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BSP603S2LHUMA1

BSP603S2LHUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSP603S2LHUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 5.2A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
754375 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 28 - Jul 02 2025
PDF
BSP603S2LHUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1390 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
BSP603S2LHUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSP603S2LHUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSP603S2LHUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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