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SI4866BDY-T1-GE3

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SI4866BDY-T1-GE3

SI4866BDY-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI4866BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 12V 21.5A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
914391 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
SI4866BDY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:5020 pF @ 6 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 4.45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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