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IPD12CNE8N G

IPD12CNE8N G

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Part No :

IPD12CNE8N G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 85V 67A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
214421 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
PDF
IPD12CNE8N G PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 40 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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