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RP1E100RPTR

RP1E100RPTR

Image is for reference, please contact us to get the real picture

Part No :

RP1E100RPTR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 10A MPT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
814481 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 08 - Jul 12 2025
PDF
RP1E100RPTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MPT6
Package / Case:6-SMD, Flat Leads
RP1E100RPTR is available at GangBo-ic.com, Please review product page below for detailed information, including RP1E100RPTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RP1E100RPTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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