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SI1065X-T1-E3

SI1065X-T1-E3

MOSFET P-CH 12V 1.18A SC89-6

SI1065X-T1-E3

SI1065X-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI1065X-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 1.18A SC89-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
254525 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 19 - Jul 23 2025
PDF
SI1065X-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:1.18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 6 V
FET Feature:-
Power Dissipation (Max):236mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-6
Package / Case:SOT-563, SOT-666
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