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EPC2010

EPC2010

GANFET N-CH 200V 12A DIE

EPC2010

EPC2010

Image is for reference, please contact us to get the real picture

Part No :

EPC2010

Manufacturer
EPC
Description
GANFET N-CH 200V 12A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
874587 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
EPC2010 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC2010 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2010 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2010 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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