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IRF3315S

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IRF3315S

IRF3315S

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Part No :

IRF3315S

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 21A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
104710 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 07 - Nov 11 2025
PDF
IRF3315S PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3315S is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3315S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3315S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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