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IRFBE30

IRFBE30

MOSFET N-CH 800V 4.1A TO220AB

IRFBE30

IRFBE30

Image is for reference, please contact us to get the real picture

Part No :

IRFBE30

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 4.1A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
254825 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 20 - Jul 24 2025
PDF
IRFBE30 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFBE30 is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBE30 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBE30 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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