







TLVH431NAQDBZR/SOT23/TO-236AB
MOSFET N-CH 600V 36A SOT-227B
XTAL OSC VCXO 10.0000MHZ HCMOS
| Type | Description |
|---|---|
| Series: | HiPerFET™ |
| Package: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 180mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs: | 325 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 520W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | SOT-227B |
| Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
STL9N3LLH5STMicroelectronics |
MOSFET N-CH 30V 9A POWERFLAT |
|
|
SIR788DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
|
IRFIZ24EIR (Infineon Technologies) |
MOSFET N-CH 60V 14A TO220AB FP |
|
|
IRF6798MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 37A DIRECTFET |
|
|
RJK0346DPA-01#J0BRenesas Electronics America |
MOSFET N-CH 30V 65A 8WPAK |
|
|
IPBH6N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO263-3 |
|
|
IRF644NSTRRVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
|
BSP300 E6327IR (Infineon Technologies) |
MOSFET N-CH 800V 190MA SOT223-4 |
|
|
FQI5N20LTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 4.5A I2PAK |
|
|
RFP22N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 22A TO220-3 |
|
|
SI2305ADS-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 5.4A SOT23-3 |
|
|
SIA450DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 240V 1.52A PPAK |
|
|
SI6404DQ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP |