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NTMFS4826NET1G

NTMFS4826NET1G

MOSFET N-CH 30V 9.5A/66A 5DFN

NTMFS4826NET1G

NTMFS4826NET1G

Image is for reference, please contact us to get the real picture

Part No :

NTMFS4826NET1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 30V 9.5A/66A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
695069 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 04 - Aug 08 2025
PDF
NTMFS4826NET1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 12 V
FET Feature:-
Power Dissipation (Max):870mW (Ta), 41.7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NTMFS4826NET1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFS4826NET1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFS4826NET1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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