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STI200N6F3

STI200N6F3

MOSFET N-CH 60V 120A I2PAK

STI200N6F3

STI200N6F3

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Part No :

STI200N6F3

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 60V 120A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
895389 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 17 - Jun 21 2024
PDF
STI200N6F3 PDF
Type Description
Series:STripFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:101 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6265 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI200N6F3 is available at GangBo-ic.com, Please review product page below for detailed information, including STI200N6F3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI200N6F3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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