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FQPF55N10

FQPF55N10

Image is for reference, please contact us to get the real picture

Part No :

FQPF55N10

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 34.2A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
115811 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2025
PDF
FQPF55N10 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:34.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2730 pF @ 25 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF55N10 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF55N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF55N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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