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IPD180N10N3GBTMA1

IPD180N10N3GBTMA1

MOSFET N-CH 100V 43A TO252-3

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IPD180N10N3GBTMA1

IPD180N10N3GBTMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD180N10N3GBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 43A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
866086 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
IPD180N10N3GBTMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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