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SiT3373AC-1E2-30NE281.000000X

SiT3373AC-1E2-30NE281.000000X

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FQB3N90TM

FQB3N90TM

MOSFET N-CH 900V 3.6A D2PAK

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CY2305SI-1H

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FQB3N90TM

FQB3N90TM

Image is for reference, please contact us to get the real picture

Part No :

FQB3N90TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 900V 3.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
366136 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2025
PDF
FQB3N90TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB3N90TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB3N90TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB3N90TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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