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SI4833BDY-T1-GE3

SI4833BDY-T1-GE3

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Part No :

SI4833BDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CHANNEL 30V 4.6A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
646464 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 22 - May 26 2025
PDF
SI4833BDY-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:68mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):2.75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4833BDY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4833BDY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4833BDY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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