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NDS356AP-NB8L005A

NDS356AP-NB8L005A

MOSFET P-CH 30V 1.1A SOT23-3

NDS356AP-NB8L005A

NDS356AP-NB8L005A

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Part No :

NDS356AP-NB8L005A

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 30V 1.1A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
936993 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 13 - Jun 17 2025
Type Description
Series:-
Package:Tray
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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