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IPB093N04LGATMA1

IPB093N04LGATMA1

MOSFET N-CH 40V 50A D2PAK

IPB093N04LGATMA1

IPB093N04LGATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB093N04LGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 50A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
497349 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 07 - Jul 11 2025
PDF
IPB093N04LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 20 V
FET Feature:-
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB093N04LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB093N04LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB093N04LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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