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IPA50R650CE

IPA50R650CE

MOSFET N-CH 500V 6.1A TO220-FP

IPA50R650CE

IPA50R650CE

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Part No :

IPA50R650CE

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 500V 6.1A TO220-FP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
637563 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 12 - Jul 16 2025
PDF
IPA50R650CE PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:342 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):27.2W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
IPA50R650CE is available at GangBo-ic.com, Please review product page below for detailed information, including IPA50R650CE price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA50R650CE to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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