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FQP19N20C_F080

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MOSFET N-CH 200V 19A TO220-3

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FQP19N20C_F080

FQP19N20C_F080

Image is for reference, please contact us to get the real picture

Part No :

FQP19N20C_F080

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 19A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
917591 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 23 - Oct 27 2025
PDF
FQP19N20C_F080 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:-
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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