







MEMS OSC XO 66.0000MHZ H/LV-CMOS
FUSE BOARD MOUNT 2A 250VAC AXIAL
MOSFET N-CH 600V 10.6A TO252-3
IC FF D-TYPE SNGL 6BIT 16SO
| Type | Description |
|---|---|
| Series: | CoolMOS™ P6 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Discontinued at Digi-Key |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 10.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 380mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 877 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 83W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
BTS247Z E3062AIR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO263-5 |
|
|
IRFU9N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 9.4A IPAK |
|
|
PH6530AL,115NXP Semiconductors |
MOSFET N-CH 30V LFPAK56 PWR-SO8 |
|
|
EPC2007EPC |
GANFET N-CH 100V 6A DIE OUTLINE |
|
|
AUIRFU4292IR (Infineon Technologies) |
MOSFET N CH 250V 9.3A IPAK |
|
|
STD19NF20STMicroelectronics |
MOSFET N-CHANNEL 200V 15A DPAK |
|
|
IRFR9010TRLVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
|
IPP80N04S2H4AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
|
IPB60R380P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A D2PAK |
|
|
APT6M100KMicrosemi |
MOSFET N-CH 1000V 6A TO220 |
|
|
IRF7603TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5.6A MICRO8 |
|
|
SI4888DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8SO |
|
|
IXFT10N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO268 |