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STB12NM60N-1

STB12NM60N-1

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Part No :

STB12NM60N-1

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 10A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
057805 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 09 - Jun 13 2025
PDF
STB12NM60N-1 PDF
Type Description
Series:MDmesh™ II
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 50 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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