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FQD4N20LTF

FQD4N20LTF

Image is for reference, please contact us to get the real picture

Part No :

FQD4N20LTF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 3.2A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
487948 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 19 - Jun 23 2025
PDF
FQD4N20LTF PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20LTF is available at GangBo-ic.com, Please review product page below for detailed information, including FQD4N20LTF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD4N20LTF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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