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IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO262

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IRF9Z24NLPBF

IRF9Z24NLPBF

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Part No :

IRF9Z24NLPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 55V 12A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
078007 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
IRF9Z24NLPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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