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SI7100DN-T1-GE3

SI7100DN-T1-GE3

MOSFET N-CH 8V 35A PPAK 1212-8

SI7100DN-T1-GE3

SI7100DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI7100DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 8V 35A PPAK 1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
238123 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 10 - Nov 14 2025
PDF
SI7100DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3810 pF @ 4 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 52W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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