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FQB4N25TM

FQB4N25TM

MOSFET N-CH 250V 3.6A D2PAK

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FQB4N25TM

FQB4N25TM

Image is for reference, please contact us to get the real picture

Part No :

FQB4N25TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 250V 3.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
458145 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 10 - Nov 14 2025
PDF
FQB4N25TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB4N25TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB4N25TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB4N25TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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