IPB65R110CFD7ATMA1

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Part No :: IPB65R110CFD7ATMA1

Manufacturer: IR (Infineon Technologies)

Description: HIGH POWER_NEW

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 984198 pieces

Shipped from: HK warehouse

Expected Shipping Date: Jun 28 - Jul 02 2025

Type	Description
Series:	CoolMOS™ CFD7
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1942 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	114W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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