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SSM6G18NU,LF

SSM6G18NU,LF

Image is for reference, please contact us to get the real picture

Part No :

SSM6G18NU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 20V 2A 6UDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 18 - Jul 22 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:112mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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