







FIXED IND 3.9UH 344MA 590 MOHM
MEMS OSC XO 14.0000MHZ LVCMOS LV
MEMS OSC XO 14.0000MHZ H/LV-CMOS
N-CHANNEL POWER MOSFET
| Type | Description |
|---|---|
| Series: | * |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | - |
| Technology: | - |
| Drain to Source Voltage (Vdss): | - |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Supplier Device Package: | - |
| Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
MTV32N20ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SK2529-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SI4953DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
2SK544ERochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
|
SIR826DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
|
IRF632Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NE5550779A-T1A-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPP052NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
RJK03E0DNS-02#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ463A(91)-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
|
IRFBC40RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTLJS4D9N03HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A 6PQFN |
|
|
RF1S23N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |