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IPD036N04LGATMA1

IPD036N04LGATMA1

MOSFET N-CH 40V 90A TO252-31

IPD036N04LGATMA1

IPD036N04LGATMA1

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Part No :

IPD036N04LGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 90A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
345334 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 07 - Oct 11 2025
Type Description
Series:OptiMOS™ 3
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6300 pF @ 20 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD036N04LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD036N04LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD036N04LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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