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SCT30N120D2

SCT30N120D2

SICFET N-CH 1200V 40A HIP247

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SCT30N120D2

SCT30N120D2

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Part No :

SCT30N120D2

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 40A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
905790 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 09 - May 13 2025
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 400 V
FET Feature:-
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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