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SVD5865NLT4G

SVD5865NLT4G

60V 0.019OHM N-CHANNEL MOSFET

SVD5865NLT4G

SVD5865NLT4G

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Part No :

SVD5865NLT4G

Manufacturer
Rochester Electronics
Description
60V 0.019OHM N-CHANNEL MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
766076 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 10 - Nov 14 2025
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK (SINGLE GAUGE)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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