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H5N3011P80-E#T2

H5N3011P80-E#T2

N-CHANNEL POWER MOSFET

H5N3011P80-E#T2

H5N3011P80-E#T2

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Part No :

H5N3011P80-E#T2

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14770 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
H5N3011P80-E#T2 is available at GangBo-ic.com, Please review product page below for detailed information, including H5N3011P80-E#T2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for H5N3011P80-E#T2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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