







MOSFET 200V 9.3A DIE
| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | - |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 9.3A |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 300mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IPC60R520E6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
ISP06P009LXTSA1IR (Infineon Technologies) |
SMALL SIGNAL MOSFETS |
|
|
AUXTLR3110ZIR (Infineon Technologies) |
MOSFET N-CH 100V DPAK |
|
|
IXFV110N10PSWickmann / Littelfuse |
MOSFET N-CH 100V 110A PLUS220SMD |
|
|
JAN2N6798UMicrosemi |
MOSFET N-CH 200V 5.5A 18ULCC |
|
|
JANTXV2N6790UMicrosemi |
MOSFET N-CH 200V 2.8A 18ULCC |
|
|
AOTF12T60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO220F |
|
|
RJK03M1DPA-WS#J5ARenesas Electronics America |
IGBT |
|
|
AO3418_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V SOT23 |
|
|
ISP06P008NXTSA1IR (Infineon Technologies) |
SMALL SIGNAL MOSFETS |
|
|
SIPC69N60CFDX1SA4IR (Infineon Technologies) |
MOSFET N-CH HI POWER DIE |
|
|
BUK9MJJ-55PSS/A,51Nexperia |
55V N CH TRENCHFET |
|
|
RJK0455DPB-WS#J5Renesas Electronics America |
IGBT |