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IRC630PBF

IRC630PBF

MOSFET N-CH 200V 9A TO220-5

IRC630PBF

IRC630PBF

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Part No :

IRC630PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 9A TO220-5
Catalog
Transistors - FETs, MOSFETs - Single
Availability
949094 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 11 - Jul 15 2025
PDF
IRC630PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:Current Sensing
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-5
Package / Case:TO-220-5
IRC630PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRC630PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRC630PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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